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SPB80P06P |
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| Part Number | SPB80P06P |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | SPB80P06P G SIPMOS® Power-Transistor Features Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance R... |
| Features |
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.023 Continuous drain current ID -80 A · 175°C operating temperature ° Pb-free lead plating: RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Type SPB80P06P G Package Lead free PG-TO263-3 Yes Pin 1 PIN 2/4 PIN 3 G D S Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current TC = 25 ... |
| Document |
 SPB80P06P Data Sheet
PDF 607.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPB80P06P |
INCHANGE |
P-Channel MOSFET |
|
| 2 | SPB80P06PG |
Infineon |
Power Transistor |
|
| 3 | SPB80N03 |
Siemens Semiconductor Group |
SIPMOS Power Transistor |
|
| 4 | SPB80N03L |
Siemens |
Power Transistor |
|
| 5 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor |
|