SPP80N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A RDS(on) 0.006 Ω • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPP80N03L SPB80N03L Package Ordering Code Packaging Pin 1 G Pin .
• N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 80
V A
RDS(on) 0.006 Ω
• Avalanche rated
• Logic Level
• dv/dt rated
• 175°C operating temperature
Type SPP80N03L SPB80N03L
Package
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
P-TO220-3-1 Q67040-S4735-A2 Tube P-TO263-3-2 Q67040-S4735-A3 Tape and Reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A
ID
TC = 25 °C, TC = 100 °C
1)
Pulsed drain curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPB80N03 |
Siemens Semiconductor Group |
SIPMOS Power Transistor | |
2 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
3 | SPB80N03S2-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
4 | SPB80N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
5 | SPB80N03S2L-03 |
Infineon Technologies |
OptiMOS Power-Transistor | |
6 | SPB80N03S2L-04 |
Infineon Technologies |
OptiMOS Power-Transistor | |
7 | SPB80N03S2L-04 |
Infineon Technologies |
Power-Transistor | |
8 | SPB80N03S2L-05 |
Infineon Technologies |
OptiMOS Power-Transistor | |
9 | SPB80N03S2L-05 |
Infineon Technologies |
Power-Transistor | |
10 | SPB80N03S2L-06 |
Infineon Technologies |
OptiMOS Power-Transistor | |
11 | SPB80N03S2L-06 |
Infineon Technologies |
Power-Transistor | |
12 | SPB80N04S2-04 |
Infineon Technologies |
OptiMOS Power-Transistor |