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SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge VDS RDS(on) ID 800 0.29 17 V Ω A PG-TO220-3-31 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 23 1 • Improved transconductance • P.
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SPA17N80C3 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Sw.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER |
|
| 2 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPA11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor |
|
| 6 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor |
|
| 8 | SPA11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 9 | SPA11N65C3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | SPA11N65C3 |
Infineon Technologies |
Power Transistor |
|
| 11 | SPA11N80C3 |
Infineon Technologies |
Power Transistor |
|
| 12 | SPA11N80C3 |
INCHANGE |
N-Channel MOSFET |
|