CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed fo.
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPA11N80C3
800 V 0.45 Ω 64 nC
Type SPA11N80C3
Package PG-TO220-3
Marking 11N80C3
Maximum ratings, at T j=25 °.
isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
2 | SPA11N60C3 |
Infineon Technologies |
Power Transistor | |
3 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET | |
4 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor | |
5 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET | |
6 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor | |
7 | SPA11N60CFD |
INCHANGE |
N-Channel MOSFET | |
8 | SPA11N65C3 |
INCHANGE |
N-Channel MOSFET | |
9 | SPA11N65C3 |
Infineon Technologies |
Power Transistor | |
10 | SPA1118Z |
RF Micro Devices |
POWER AMPLIFIER | |
11 | SPA12N50C3 |
INCHANGE |
N-Channel MOSFET | |
12 | SPA12N50C3 |
Infineon Technologies |
Power Transistor |