SPA11N80C3 |
Part Number | SPA11N80C3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot... |
Features |
·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPA11N80C3 ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 11 7.1 33 PD Total Dissipation 41 Tj Operating Junction Temperature -55~150 Tstg Storag... |
Document |
SPA11N80C3 Data Sheet
PDF 197.85KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | SPA11N80C3 |
Infineon Technologies |
Power Transistor | |
2 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor | |
3 | SPA11N60C3 |
Infineon Technologies |
Power Transistor | |
4 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET | |
5 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor |