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SPA11N60CFD |
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| Part Number | SPA11N60CFD |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minim... |
| Features |
·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor SPA11N60CFD ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 11 7 28 PD Total Dissipation @TC=25℃ 33 Tj Max. Operating Junction... |
| Document |
 SPA11N60CFD Data Sheet
PDF 196.47KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA11N60CFD |
Infineon Technologies |
CoolMOS Power Transistor |
|
| 2 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 3 | SPA11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 4 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor |
|