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SPA1118Z |
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| Part Number | SPA1118Z |
| Manufacturer | RF Micro Devices |
| Description | RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular ... |
| Features |
High Linearity Performance +21dBm IS-95 Channel Power at -55dBc ACP +48dBm OIP3 Typ. On-Chip Active Bias Control Patented High Reliability GaAs HBT Technology Surface-Mountable Plastic Package Applications Multi-Carrier Applications AMPS, ISM Applications Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Small Signal Gain Input VSWR Output Third Order Intercept Point Noise Figure Device Current Device Voltage Thermal Resistance (junction-lead) Test Conditions: Z0=50 VCC=5V Specification Min. Typ. 810 29.5 -57.0 16.2 17.2 1.5:1 48... |
| Document |
 SPA1118Z Data Sheet
PDF 253.15KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA11N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |
|
| 2 | SPA11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPA11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPA11N60C3E8185 |
Infineon Technologies |
Power Transistor |
|
| 5 | SPA11N60C3E8185 |
INCHANGE |
N-Channel MOSFET |
|