Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifica.
• High Linearity Performance:
+20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3
VCC VBIAS RFIN N/C
www.DataSheet4U.com
RFOUT/ VCC
Input Match
Reduction
Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF Icc
Parameters: Test Conditions: Z0 = 50 Ohms, Temp = 25ºC, Vcc = 5.0V Frequency of Operation
R EC O M M EN D ED
FO R
Units MHz dB m dB c dB dB m dB mA V ºC/W
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package Applications
• W-CDMA Systems
• Multi-Carrier Applications
Min. 2110 29.0 -50.0 11.5 12.5 1.5:1 47.0 7.0 275 4.75 310 5.0 35 330 5.25 -47.0 13.5.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier | |
2 | SPA-1118Z |
Sirenza Microdevices |
Power Amplifier | |
3 | SPA-1218 |
Stanford Microdevices |
Power Amp | |
4 | SPA-1426Z |
RFMD |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER | |
5 | SPA-1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER | |
6 | SPA-1712 |
Ningbo |
Buzzer | |
7 | SPA-2118 |
ETC |
850 MHz 1 Watt Power Amplifier with Active Bias | |
8 | SPA-2318 |
Sirenza Microdevices |
Power Amp | |
9 | SPA-2318Z |
Sirenza Microdevices |
Power Amp | |
10 | SPA02-8028 |
CHIKARA |
Power Inductors | |
11 | SPA02-8038 |
CHIKARA |
Power Inductors | |
12 | SPA02-8043 |
CHIKARA |
Power Inductors |