SPA-1218 - Stanford Microdevices

SPA-1218 Power Amp

Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specific.

Features

• On-chip Active Bias Control
• Patented High Reliability GaAsHBT Technology
• High Linearity Performance: +48dBm OIP3 Typ.
• Surface-Mountable Plastic Package Applications
• PCS Systems
• Multi-Carrier Applications RFOUT/ VCC Input Match N/C Symbol f0 P 1dB S 21 S11 OIP3 Icc Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, VC C =5V, Temp = 27ºC Frequency of Operati on Output Power at 1dB C ompressi on Vc1, Vbi as, Vc2 = 5.0V Small Si gnal Gai n Input VSWR Output Thi rd Order Intercept Poi nt Power out per tone = +14 dBm D evi ce C urrent, VC C = 5V Thermal Resi stance (juncti on - lea.