SPA-1526Z - RFMD

SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the .

Features

an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET 9 InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT dBc ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 POUT (dBm) Features „ P1dB=32dBm @ 2140MHz „ ACP=-65dBc with 18.4dBm Channel Power @ 2140MHz „ Low Thermal Resistance P.