Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifica.
• High Linearity Performance:
+20.7 dBm IS-95 CDMA Channel Power at -55 dBc ACP +47 dBm typ. OIP3
VC1 VBIAS RFIN VPC2
Active Bias
RFOUT/ VC2
• On-chip Active Bias Control
• High Gain: 33 dB Typ.
• Patented High Reliability GaAsHBT Technology
• Surface-Mountable Plastic Package Applications
• IS-95 CDMA Systems
• Multi-Carrier Applications
• AMPS, ISM Applications
Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF ICC VCC Rth j-l
Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, VCC= 5.0V Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power IS-95 @880 MHz, ±885 KHz offset.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPA-2318 |
Sirenza Microdevices |
Power Amp | |
2 | SPA-2318Z |
Sirenza Microdevices |
Power Amp | |
3 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier | |
4 | SPA-1118Z |
Sirenza Microdevices |
Power Amplifier | |
5 | SPA-1218 |
Stanford Microdevices |
Power Amp | |
6 | SPA-1318 |
Sirenza Microdevices |
Power Amplifier | |
7 | SPA-1426Z |
RFMD |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER | |
8 | SPA-1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER | |
9 | SPA-1712 |
Ningbo |
Buzzer | |
10 | SPA02-8028 |
CHIKARA |
Power Inductors | |
11 | SPA02-8038 |
CHIKARA |
Power Inductors | |
12 | SPA02-8043 |
CHIKARA |
Power Inductors |