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SPA-1318 |
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| Part Number | SPA-1318 |
| Manufacturer | Sirenza Microdevices |
| Description | Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated u... |
| Features |
• High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 VCC VBIAS RFIN N/C www.DataSheet4U.com RFOUT/ VCC Input Match Reduction Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF Icc Parameters: Test Conditions: Z0 = 50 Ohms, Temp = 25ºC, Vcc = 5.0V Frequency of Operation R EC O M M EN D ED FO R Units MHz dB m dB c dB dB m dB mA V ºC/W • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • W-CDMA Systems • Multi-Carrier Applications Min. 2110 29.0 -50.0 11.5 12.5 1.5:1 47.0 7.0 275 4.75 310 5.0 35 330 5.25 -47.0 13.5... |
| Document |
 SPA-1318 Data Sheet
PDF 114.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier |
|
| 2 | SPA-1118Z |
Sirenza Microdevices |
Power Amplifier |
|
| 3 | SPA-1218 |
Stanford Microdevices |
Power Amp |
|
| 4 | SPA-1426Z |
RFMD |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER |
|
| 5 | SPA-1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER |
|