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SPA-1218 |
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| Part Number | SPA-1218 |
| Manufacturer | Stanford Microdevices |
| Description | Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated ... |
| Features |
• On-chip Active Bias Control • Patented High Reliability GaAsHBT Technology • High Linearity Performance: +48dBm OIP3 Typ. • Surface-Mountable Plastic Package Applications • PCS Systems • Multi-Carrier Applications RFOUT/ VCC Input Match N/C Symbol f0 P 1dB S 21 S11 OIP3 Icc Rth, j-l Parameters: Test C onditions: Z0 = 50 Ohms, VC C =5V, Temp = 27ºC Frequency of Operati on Output Power at 1dB C ompressi on Vc1, Vbi as, Vc2 = 5.0V Small Si gnal Gai n Input VSWR Output Thi rd Order Intercept Poi nt Power out per tone = +14 dBm D evi ce C urrent, VC C = 5V Thermal Resi stance (juncti on - lea... |
| Document |
 SPA-1218 Data Sheet
PDF 236.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SPA-1118 |
Sirenza Microdevices |
Power Amplifier |
|
| 2 | SPA-1118Z |
Sirenza Microdevices |
Power Amplifier |
|
| 3 | SPA-1318 |
Sirenza Microdevices |
Power Amplifier |
|
| 4 | SPA-1426Z |
RFMD |
0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER |
|
| 5 | SPA-1526Z |
RFMD |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER |
|