The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Require.
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING S33 SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current (t=300µs) Maximum Pow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS2301 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
2 | SMS2301-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SMS2301Y-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
4 | SMS2303-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
5 | SMS2305R |
SeCoS |
P-Channel MOSFET | |
6 | SMS2310 |
SeCoS |
N-Channel MOSFET | |
7 | SMS2312 |
SeCoS |
N-Channel MOSFET | |
8 | SMS2321 |
SeCoS |
P-Channel MOSFET | |
9 | SMS2001-C |
SeCoS |
P-Channel MOSFET | |
10 | SMS2002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
11 | SMS2009E-C |
SeCoS |
N-Channel MOSFET | |
12 | SMS201 |
MA-COM |
Silicon Schottky Diode |