AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or c.
This chip is used for:
• 1700V technology, Emitter Controlled
• soft, fast switching
• power modules and discrete devices
• low reverse recovery charge
• small temperature coefficient
Applications:
• SMPS, resonant applications,
C
drives
Chip Type SIDC73 D170E6
VR
IF
1700V 100A
Die Size 8.53 x 8.53 mm2
Package sawn on foil
Mechanical Parameter Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size Recommended storage environment
8.53 x 8.53 72.76
mm 2
6.51 x.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC78D170H |
Infineon |
Fast switching diode | |
2 | SIDC02D60C8 |
Infineon |
Fast switching diode | |
3 | SIDC02D65C8 |
Infineon |
Fast switching diode | |
4 | SIDC03D120H8 |
Infineon |
Fast switching diode | |
5 | SIDC03D60C8 |
Infineon |
Fast switching diode | |
6 | SIDC03D65C8 |
Infineon |
Fast switching diode | |
7 | SIDC05D60C8 |
Infineon |
Fast switching diode | |
8 | SIDC05D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
9 | SIDC05D65C8 |
Infineon |
Fast switching diode | |
10 | SIDC06D120F6 |
Infineon |
Fast switching diode | |
11 | SIDC06D120H8 |
Infineon |
Fast switching diode | |
12 | SIDC06D60C8 |
Infineon |
Fast switching diode |