SIDC06D120F6 - Infineon

SIDC06D120F6 Fast switching diode

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.0 2.1 Subjects (major changes since last revision) Final data sheet Operating junction and storage temperature Date 26.10.2012 14.05.2013 Published by Infineon Technologies AG 81726 Munich, Germany © 2.

Features

Recommended for: A
 1200V technology 120 µm chip
 power modules and discrete
 soft, fast switching devices
 low reverse recovery charge C
 small temperature coefficient
 qualified according to JEDEC for target Applications: applications
 SMPS, resonant applications, drives Chip Type SIDC06D120F6 VR IFn 1200V 5A Die Size 2.45 x 2.45 mm2 Package sawn on foil Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal 2.45 x 2.45 6 1.73 x 1.73 120 150 2520 Photoimide 3200 n.