AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.
• 600V Emitter Controlled 3 technology 70 µm chip
This chip is used for:
• Power module
• Discrete components
• soft, fast switching
C
• low reverse recovery charge
Applications:
• small temperature coefficient
• Drives
• White goods
• Resonant applications
Chip Type SIDC06D60C8
VR
IF
600V 20A
Die Size 2.34 x 2.42 mm2
Package sawn on foil
Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
2.34 x 2.42 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC06D65C8 |
Infineon |
Fast switching diode | |
2 | SIDC06D120F6 |
Infineon |
Fast switching diode | |
3 | SIDC06D120H8 |
Infineon |
Fast switching diode | |
4 | SIDC02D60C8 |
Infineon |
Fast switching diode | |
5 | SIDC02D65C8 |
Infineon |
Fast switching diode | |
6 | SIDC03D120H8 |
Infineon |
Fast switching diode | |
7 | SIDC03D60C8 |
Infineon |
Fast switching diode | |
8 | SIDC03D65C8 |
Infineon |
Fast switching diode | |
9 | SIDC05D60C8 |
Infineon |
Fast switching diode | |
10 | SIDC05D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
11 | SIDC05D65C8 |
Infineon |
Fast switching diode | |
12 | SIDC07D60AF6 |
Infineon |
Fast switching diode |