AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subject (major changes since last revision) 2.0 Final data sheet 2.1 Editorial changes Date 30.12.2014 14.10.2015 Edited by INFINEON Technologies, L4052C, Rev 2.1, 14.10.2015 SIDC06D120H8 Published .
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching
Low reverse recovery charge
Small temperature coefficient
Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC06D120H8 1200V 7.5A
Die Size 2.45 x 2.45 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
2.45 x 2.45 6
mm2
Anode pad size
1.73 x 1.73
Thickness
120
µm
Wafer size
200
mm
Max. possible chips per wafer
4656
Passivation frontside
Photoimide
Pad.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC06D120F6 |
Infineon |
Fast switching diode | |
2 | SIDC06D60C8 |
Infineon |
Fast switching diode | |
3 | SIDC06D65C8 |
Infineon |
Fast switching diode | |
4 | SIDC02D60C8 |
Infineon |
Fast switching diode | |
5 | SIDC02D65C8 |
Infineon |
Fast switching diode | |
6 | SIDC03D120H8 |
Infineon |
Fast switching diode | |
7 | SIDC03D60C8 |
Infineon |
Fast switching diode | |
8 | SIDC03D65C8 |
Infineon |
Fast switching diode | |
9 | SIDC05D60C8 |
Infineon |
Fast switching diode | |
10 | SIDC05D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
11 | SIDC05D65C8 |
Infineon |
Fast switching diode | |
12 | SIDC07D60AF6 |
Infineon |
Fast switching diode |