SIDC06D120H8 |
Part Number | SIDC06D120H8 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subject (major changes since last revision) ... |
Features |
1200V Emitter Controlled technology 120 µm chip Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target applications Recommended for: Power modules and discrete devices Applications: SMPS, resonant applications, drives Chip Type VR IFn SIDC06D120H8 1200V 7.5A Die Size 2.45 x 2.45 mm2 Package sawn on foil Mechanical Parameters Die size Area total 2.45 x 2.45 6 mm2 Anode pad size 1.73 x 1.73 Thickness 120 µm Wafer size 200 mm Max. possible chips per wafer 4656 Passivation frontside Photoimide Pad... |
Document |
SIDC06D120H8 Data Sheet
PDF 204.49KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC06D120F6 |
Infineon |
Fast switching diode | |
2 | SIDC06D60C8 |
Infineon |
Fast switching diode | |
3 | SIDC06D65C8 |
Infineon |
Fast switching diode | |
4 | SIDC02D60C8 |
Infineon |
Fast switching diode | |
5 | SIDC02D65C8 |
Infineon |
Fast switching diode |