AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.
This chip is used for:
• 600V Emitter Controlled technology 70 µm
• power modules and discrete
chip
devices
• soft , fast switching
C
• low reverse recovery charge
• small temperature coefficient
Applications:
• SMPS, resonant applications,
drives
Chip Type
SIDC07D60AF6
VR
IF
600V 22.5A
Die Size 2.65 x 2.65 mm2
Package sawn on foil
Mechanical Parameters Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
2.65 x 2.65 7.02
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC02D60C8 |
Infineon |
Fast switching diode | |
2 | SIDC02D65C8 |
Infineon |
Fast switching diode | |
3 | SIDC03D120H8 |
Infineon |
Fast switching diode | |
4 | SIDC03D60C8 |
Infineon |
Fast switching diode | |
5 | SIDC03D65C8 |
Infineon |
Fast switching diode | |
6 | SIDC05D60C8 |
Infineon |
Fast switching diode | |
7 | SIDC05D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode | |
8 | SIDC05D65C8 |
Infineon |
Fast switching diode | |
9 | SIDC06D120F6 |
Infineon |
Fast switching diode | |
10 | SIDC06D120H8 |
Infineon |
Fast switching diode | |
11 | SIDC06D60C8 |
Infineon |
Fast switching diode | |
12 | SIDC06D65C8 |
Infineon |
Fast switching diode |