SI8816EDB - Vishay

SI8816EDB N-Channel MOSFET

www.vishay.com Si8816EDB Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. 0.109 at VGS = 10 V 30 0.116 at VGS = 4.5 V 0.123 at VGS = 3.7 V 0.142 at VGS = 2.5 V ID (A) a 2.3 2.3 2.2 2.0 Qg (Typ.) 2.4 nC MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side View 0.8 mm Marking Code: xx .

Features

• TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1700 V (HBM)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load switch
• OVP switch
• High speed switching
• DC/DC converters
• For smart phones, tablet PCs, and mobile computing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TA = 25 °C .