Si8800EDB - Vishay Siliconix

Si8800EDB N-Channel 20 V (D-S) MOSFET

New Product www.DataSheet4U.com Si8800EDB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.080 at VGS = 4.5 V 20 0.090 at VGS = 2.5 V 0.105 at VGS = 1.8 V 0.150 at VGS = 1.5 V ID (A)a 2.8 2.6 2.4 2.0 3.2 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Ultra Small 0.8.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Ultra Small 0.8 mm x 0.8 mm Outline
• Ultra Thin 0.357 mm Height
• Typical ESD Protection 1500 V
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS MICRO FOOT Bump Side View Backside View S 2 G 1
• Portable Devices such as Cell Phones, Smart Phones and MP3 Players - Load Switch - Small Signal Switch R G D 800 XXX S 3 D 4 Device Marking: 800 xxx = Date/Lot Traceability Code Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise.