Si8817DB - Vishay

Si8817DB P-Channel 20V (D-S) MOSFET

www.vishay.com Si8817DB Vishay Siliconix P-Channel 20 V (D-S) MOSFET MICRO FOOT® 0.8 x 0.8 S S2 xxxxx 3 0.8 mm 1 0.8 mm Backside View 1 4G D Bump Side View Marking code: AF PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V RDS(on) max. () at VGS = -1.5 V Qg typ. (nC) ID (A) a, .

Features

• TrenchFET® power MOSFET
• Small 0.8 mm x 0.8 mm outline area
• Low 0.4 mm max. profile
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load switches and chargers switches
• Battery management
• DC/DC converters
• For smart phones and tablet PCs G S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free MICRO FOOT 0.8 x 0.8 Si8817DB-T2-E1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pul.