SI8816EDB |
Part Number | SI8816EDB |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com Si8816EDB Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. 0.109 at VGS = 10 V 30 0.116 at VGS = 4.5 V 0.123 at VGS = 3.7 V 0.142 at VGS = 2... |
Features |
• TrenchFET® power MOSFET • Ultra small 0.8 mm x 0.8 mm outline • Ultra thin 0.4 mm max. height • Typical ESD protection 1700 V (HBM) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Load switch • OVP switch • High speed switching • DC/DC converters • For smart phones, tablet PCs, and mobile computing G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TA = 25 °C ... |
Document |
SI8816EDB Data Sheet
PDF 149.59KB |
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