Si8812DB - Vishay

Si8812DB N-Channel MOSFET

New Product Si8812DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.059 at VGS = 4.5 V 20 0.061 at VGS = 3.7 V 0.065 at VGS = 2.5 V 0.085 at VGS = 1.8 V MICRO FOOT Bump Side View Backside View ID (A)a 3.2 3.1 3.0 2.7 Qg (Typ.) 6.3 nC • • • • • TrenchFET® Power MOSFET Small 0.8 mm x 0.8 mm Outline Area .

Features

PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.059 at VGS = 4.5 V 20 0.061 at VGS = 3.7 V 0.065 at VGS = 2.5 V 0.085 at VGS = 1.8 V MICRO FOOT Bump Side View Backside View ID (A)a 3.2 3.1 3.0 2.7 Qg (Typ.) 6.3 nC
•
•
•
•
• TrenchFET® Power MOSFET Small 0.8 mm x 0.8 mm Outline Area Low 0.4 mm max. profile Low On-Resistance Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Load Switch with Low Voltage Drop
• Power Management
• For Smart Phones, Tablet PCs, Mobile Computing G D S 2 G 1 xxx AG S 3 D 4 Device Marking: xxx = Date/Lot Tr.