SI2333DS - Vishay Siliconix

SI2333DS P-Channel MOSFET

The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 5-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capaci.

Features

al interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70106 S-50383Rev. B, 21-Mar-05 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SPICE Device Model Si2333DS Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition.