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SI2333DS |
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| Part Number | SI2333DS |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under... |
| Features |
al interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 70106 S-50383Rev. B, 21-Mar-05 www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
SPICE Device Model Si2333DS Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
a
Symbol
Test Condition... |
| Document |
 SI2333DS Data Sheet
PDF 298.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SI2333 |
PUOLOP |
P-ChannelEnhancement Mode Power MOSFET |
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| 2 | SI2333 |
MCC |
P-Channel Enhancement Mode Field Effect Transistor |
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| 3 | SI2333CDS |
Vishay Siliconix |
P-Channel MOSFET |
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| 4 | SI2331DS |
Vishay Siliconix |
P-Channel MOSFET |
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| 5 | SI2335DS |
Vishay Siliconix |
P-Channel 12-V (D-S) MOSFET |
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