SI2335DS - Vishay Siliconix

SI2335DS P-Channel 12-V (D-S) MOSFET

Si2335DS New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) 0.051 @ VGS = –4.5 V 0.070 @ VGS = –2.5 V 0.106 @ VGS = –1.8 V ID (A) –4.0 –3.5 –3.0 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2335DS (E5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-.

Features

, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2335DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID =
  –10 mA VDS = VGS, ID =
  –250 mA VDS = 0 V, VGS = "8 V VDS =
  –9.6 V, VGS = 0 V VDS =
  –9.6 V, VGS = 0 V, TJ = 55_C VDS v
  –5 V, VGS =
  –4.5 V ID(on) VDS v
  –5 V, VGS =
  –2.5 V VGS =
  –4.5 V, ID =
  –4.0 A Drain-Source On-R.