SI2333CDS - Vishay Siliconix

SI2333CDS P-Channel MOSFET

www.DataSheet.co.kr Si2333CDS Vishay Siliconix P-Channel 12-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V - 12 0.045 at VGS = - 2.5 V 0.059 at VGS = - 1.8 V ID (A)a - 5.1 - 4.5 - 3.9 9 nC Qg (Typ.) FEATURES • TrenchFET® Power MOSFET APPLICATIONS • Load Switch • PA Switch RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 .

Features

• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch
• PA Switch RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2333CDS (O3)
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* Marking Code Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 12 ±8 - 7.1 - 5.7 - 5.1b, c - 4.0b, c - 20 - 1.0 - 0.63b, c 2.5 1.6 1.25b, c 0.8b, c - 55 to 150.