SI2331DS - Vishay Siliconix

SI2331DS P-Channel MOSFET

P-Channel 1.8-V (G-S) MOSFET Si2331DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.048 at VGS = - 4.5 V - 12 0.062 at VGS = - 2.5 V 0.090 at VGS = - 1.8 V ID (A) - 3.6 - 3.2 - 2.7 TO-236 (SOT-23) G1 S2 3D FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETS APPLICATIONS • Load Switch • PA Switch Top View Si2331DS *(E1) * .

Features

• Halogen-free Option Available
• TrenchFET® Power MOSFETS APPLICATIONS
• Load Switch
• PA Switch Top View Si2331DS
*(E1)
* Marking Code Ordering Information: Si2331DS-T1-E3 (Lead (Pb)-free) Si2331DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 3.6 - 2.9 - 3.2 - 2.6 Pulsed Drain Currenta IDM - 12 Continuous Source Current (Diode Conduction)a IS - 0.74 - 0.59 Pow.