Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Clas.
• Patented GaAs Heterostructure FET
Technology
• +30dBm Output Power at 1dB Compression
• +46dBm Output IP3
• High Drain Efficiency: Up to 40% at Class AB
• 13 dB Gain at 900MHz (Application circuit)
• 13 dB Gain at 1900MHz (Application circuit) Applications
• Analog and Digital Wireless System
• Cellular PCS, CDPD, Wireless Data, Pagers
GMax(dB)
15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Frequency (GHz) Electrical Specifications at Ta = 25o C
Symbol Parameters: Test Conditions
2
Units
Min.
Typ.
Max.
|S21|
Insertion Power Gain Vds = 8.0V, I dq= 250mA, ZS=ZL=50 Ohms Maximum Available Gai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SHF-0289Z |
Sirenza Microdevices |
GaAs HFET | |
2 | SHF-0186 |
ETC |
DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET | |
3 | SHF-0186K |
ETC |
DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET | |
4 | SHF-0189 |
Sirenza Microdevices |
GaAs HFET | |
5 | SHF-0189Z |
Sirenza Microdevices |
GaAs HFET | |
6 | SHF-0589 |
ETC |
0.05-3 GHz/ 2 Watt GaAs HFET | |
7 | SHF1100SM |
SSDI |
(SHF1100SM - SHF1103SM) HYPER FAST RECTIFIER | |
8 | SHF1101 |
SSDI |
(SHF1101 - SHF1201) HYPER FAST RECOVERY RECTIFIER | |
9 | SHF1101SM |
SSDI |
(SHF1100SM - SHF1103SM) HYPER FAST RECTIFIER | |
10 | SHF1102SM |
SSDI |
(SHF1100SM - SHF1103SM) HYPER FAST RECTIFIER | |
11 | SHF1103SM |
SSDI |
(SHF1100SM - SHF1103SM) HYPER FAST RECTIFIER | |
12 | SHF1104 |
SSDI |
(SHF1104 - SHF1109) Hyper Fast Rectifier |