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SHF-0289 |
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| Part Number | SHF-0289 |
| Manufacturer | ETC |
| Description | Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Sc... |
| Features |
• Patented GaAs Heterostructure FET Technology • +30dBm Output Power at 1dB Compression • +46dBm Output IP3 • High Drain Efficiency: Up to 40% at Class AB • 13 dB Gain at 900MHz (Application circuit) • 13 dB Gain at 1900MHz (Application circuit) Applications • Analog and Digital Wireless System • Cellular PCS, CDPD, Wireless Data, Pagers GMax(dB) 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Frequency (GHz) Electrical Specifications at Ta = 25o C Symbol Parameters: Test Conditions 2 Units Min. Typ. Max. |S21| Insertion Power Gain Vds = 8.0V, I dq= 250mA, ZS=ZL=50 Ohms Maximum Available Gai... |
| Document |
 SHF-0289 Data Sheet
PDF 529.98KB |
| Distributor | Stock | Price | Buy |
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