SHF-0186K - ETC

SHF-0186K DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET

Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearity. Output power at 1dB compression for the SHF-0186K is +28 dBm when biased for Class AB.

Features

• Patented AlGaAs/GaAs Heterostructure FET Technology 40 VDS=8V, IDQ=100mA 30 GMax(dB) 20 10 0 -10 0 2 4 6 8 10 12 Frequency (GHz) Device Characteristics, T = 25ºC VDS = 8V, IDQ = 100 mA Maximum Available Gain Insertion Power Gain Gain Output 1 dB compression point Output Third Order Intercept Point Saturated Drain Current VDS = 3V, VGS = 0V Transconductance VDS = 3V, VGS = 0V Pinch-Off Voltage VDS = 3V, IDQ = 1mA Gate-to-Source Breakdown Voltage, Igs = 1.2mA Gate-to-Drain Breakdown Voltage, Igd = 1.2mA Thermal Resistance (junction to lead) Gmax S21
• +28 dBm P1dB Typical
• +40 dBm Output.