SHF-0189 - Sirenza Microdevices

SHF-0189 GaAs HFET

Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0189 is +27 dBm when biased for Cla.

Features

Directive 2002/95. This package is also manufactured with green molding
• Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (8V,100mA) 35 30 25 20 15 10 5 0 -5 0 1 2 3 4 5 6 Frequency (GHz) 7 8 Gain, Gmax (dB) Gmax
• High Linearity Performance at 1.96 GHz +27 dBm P1dB +40 dBm Output IP3 +16.5 dB Gain
• High Drain Efficiency
• See App Note AN-031 for circuit details Gain Applications
• Analog and Digital Wireless Systems
• 3G, Cellular, PCS
• Fixed Wireless, Pager Systems S ym.