SHF-0289Z - Sirenza Microdevices

SHF-0289Z GaAs HFET

Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Clas.

Features

Directive 2002/95. This package is also manufactured with green molding
• Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (7V,200mA) 40 35 30 25 20 15 10 5 0 0 1 2 Gain, Gmax (dB) Gmax Gain
• High Linearity Performance at 1.96 GHz +30 dBm P1dB +43 dBm OIP3 +23.7 dBm IS-95 Channel Power +14.6 dB Gain
• +21.7 dBm W-CDMA Channel Power
• High Drain Efficiency (>50% at P1dB)
• See App Note AN-032 for circuit details Applications 3 4 5 6 Frequency (GHz)
• Analog and Digital Wirel.