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Preliminary data SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications: - SMPS and PFC up to 150 kHz - Inverter, Motor controls • NPT-Technology for 600V applications offers: - tighter parameter distribution - h.
thstand time Power dissipation 1) tsc Ptot Tj , Tstg 10 250 -55...+150 260 µs W °C VGE = 15 V, VCC = 600 V, T j ≤ 150 °C T C = 25 °C Operating junction and storage temperature Soldering temperature, 1.6mm from case for 10s - 1) allowed number of short circuits: <1000; time between short circuits: >1s Semiconductor Group 1 02 / 1999 Preliminary data SGP30N60, SGB30N60, SGW30N60 Thermal Resistance Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient TO-220AB TO-247AC SMD version, device on PCB: TO-263AB 1) Symbol min. Values typ. max. 0.5 .
SGW30N60 - Infineon
SGP30N60 SGW30N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduct.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGW30N60HS |
Infineon |
High Speed IGBT |
|
| 2 | SGW10N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 3 | SGW10N60 |
Infineon Technologies Corporation |
Fast S-igbt |
|
| 4 | SGW10N60A |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 5 | SGW15N120 |
Infineon |
Fast IGBT |
|
| 6 | SGW15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 7 | SGW20N60 |
Infineon |
Fast IGBT |
|
| 8 | SGW20N60HS |
Infineon Technologies AG |
High Speed IGBT in NPT-technology |
|
| 9 | SGW25N120 |
Infineon Technologies AG |
Fast IGBT |
|
| 10 | SGW50N60HS |
Infineon Technologies |
High Speed IGBT |
|
| 11 | SG-10 |
Epson Company |
SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR |
|
| 12 | SG-103 |
KODENSHI KOREA CORP |
Photointerrupter |
|