SGP10N60A, SGB10N60A SGW10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - .
stg -55...+150 °C
1)
VCE 600V
IC 10A
VCE(sat) 2.3V
Tj 150°C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510
Symbol VCE IC
Value 600 20 10.6
Unit V A
ICpul s VGE EAS
40 40 ±20 70 V mJ
tSC Ptot
10 92
µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SGP10N60A, SGB10N60A SGW10N60A
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
– case Thermal resistance, junction
– ambient SMD version, device on PCB
1)
Symbol
Conditions
Max. Value
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGW10N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology | |
2 | SGW10N60 |
Infineon Technologies Corporation |
Fast S-igbt | |
3 | SGW15N120 |
Infineon |
Fast IGBT | |
4 | SGW15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology | |
5 | SGW20N60 |
Infineon |
Fast IGBT | |
6 | SGW20N60HS |
Infineon Technologies AG |
High Speed IGBT in NPT-technology | |
7 | SGW25N120 |
Infineon Technologies AG |
Fast IGBT | |
8 | SGW30N60 |
Infineon |
Fast IGBT | |
9 | SGW30N60 |
Siemens |
Fast S-IGBT | |
10 | SGW30N60HS |
Infineon |
High Speed IGBT | |
11 | SGW50N60HS |
Infineon Technologies |
High Speed IGBT | |
12 | SG-10 |
Epson Company |
SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR |