SGW20N60HS - Infineon Technologies AG

SGW20N60HS High Speed IGBT in NPT-technology

SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • High ruggedness, .

Features

tic transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) ICpul s EAS 80 80 115 mJ VGE tSC Ptot Tj , Tstg Tj(tl) - ±20 ±30 10 178 -55...+150 175 260 V µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev.2 Aug-02 Power Semiconductors SGP20N60HS SGW20N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, .