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SGW30N60 |
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| Part Number | SGW30N60 |
| Manufacturer | Siemens |
| Description | Preliminary data SGP30N60, SGB30N60, SGW30N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation • Short circuit withstand time 10 µs • Designed for moderate and high fre... |
| Features |
thstand time Power dissipation
1)
tsc Ptot Tj , Tstg
10 250 -55...+150 260
µs W °C
VGE = 15 V, VCC = 600 V, T j ≤ 150 °C T C = 25 °C
Operating junction and storage temperature Soldering temperature, 1.6mm from case for 10s -
1) allowed number of short circuits: <1000; time between short circuits: >1s
Semiconductor Group 1 02 / 1999
Preliminary data
SGP30N60, SGB30N60, SGW30N60
Thermal Resistance Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient TO-220AB TO-247AC SMD version, device on PCB: TO-263AB
1)
Symbol min.
Values typ. max. 0.5 ... |
| Document |
 SGW30N60 Data Sheet
PDF 109.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SGW30N60 |
Infineon |
Fast IGBT |
|
| 2 | SGW30N60HS |
Infineon |
High Speed IGBT |
|
| 3 | SGW10N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|
| 4 | SGW10N60 |
Infineon Technologies Corporation |
Fast S-igbt |
|
| 5 | SGW10N60A |
Infineon Technologies AG |
Fast IGBT in NPT-technology |
|