SGP20N60 SGW20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel swit.
Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C Ptot 179 W tSC 10 µs VGE EAS ±20 115 V mJ ICpuls Symbol VCE IC 40 20 80 80 Value 600 Unit V A VCE 600V 600V IC 20A 20A VCE(sat) 2.4V 2.4V Tj 150°C 150°C Marking G20N60 G20N60 Package PG-TO-220-3-1 PG-TO-247-3 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 Nov 09 Free Datasheet http://www.datasheet4u.com/ SGP20N60 SGW20N60 Thermal Resistance Parameter Characteristic IGBT thermal .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGW20N60HS |
Infineon Technologies AG |
High Speed IGBT in NPT-technology | |
2 | SGW25N120 |
Infineon Technologies AG |
Fast IGBT | |
3 | SGW10N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology | |
4 | SGW10N60 |
Infineon Technologies Corporation |
Fast S-igbt | |
5 | SGW10N60A |
Infineon Technologies AG |
Fast IGBT in NPT-technology | |
6 | SGW15N120 |
Infineon |
Fast IGBT | |
7 | SGW15N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology | |
8 | SGW30N60 |
Infineon |
Fast IGBT | |
9 | SGW30N60 |
Siemens |
Fast S-IGBT | |
10 | SGW30N60HS |
Infineon |
High Speed IGBT | |
11 | SGW50N60HS |
Infineon Technologies |
High Speed IGBT | |
12 | SG-10 |
Epson Company |
SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR |