SGM2013N - Sony Corporation

SGM2013N GaAs N-channel Dual-Gate MES FET

The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.

Features

• Ultra-small package
• Low voltage operation
• Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
• High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
• High stability
• Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 6
• Gate 1 to source voltage VG1S
  –4
• Gate 2 to source voltage VG2S
  –4
• Drain current ID 18
• Allowable power dissipation PD 100
• Channel temperature Tch 125
• Stor.