SGM2014AN - Sony Corporation

SGM2014AN GaAs N-channel Dual-Gate MES FET

The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Ultra small package • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz • High gain: Ga = 18dB (typ.) at 900MHz • Low cross-modula.

Features

• Ultra small package
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 12
• Gate 1 to source voltage VG1S
  –5
• Gate 2 to source voltage VG2S
  –5
• Drain current ID 55
• Allowable power dissipation PD 100
• Channel temperature Tch 125
• Storage temperature Tstg
  –55 to +150.