SGM2016AP - Sony Corporation

SGM2016AP GaAs N-channel Dual-Gate MES FET

The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in.

Features

• Low voltage operation
• Low noise NF = 1.2dB (typ.) at 900MHz
• High gain Ga = 21dB (typ.) at 900MHz
• High stability
• Built-in gate protection diode Application UHF-band high-frequency amplifier, mixer, and oscillator Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 12
• Gate 1 to source voltage VG1S
  –5
• Gate 2 to source voltage VG2S
  –5
• Drain current ID 55
• Allowable power dissipation PD 150
• Channel temperature Tch 150
• Storage temperature Tstg
  –55 to +150 SGM2016AM SGM2016AP V V V m.