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SGM2013N |
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| Part Number | SGM2013N |
| Manufacturer | Sony Corporation |
| Description | The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-smal... |
| Features |
• Ultra-small package • Low voltage operation • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 6 • Gate 1 to source voltage VG1S –4 • Gate 2 to source voltage VG2S –4 • Drain current ID 18 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Stor... |
| Document |
 SGM2013N Data Sheet
PDF 54.89KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SGM2013 |
SG Micro |
Linear Regulators |
|
| 2 | SGM2014AM |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET |
|
| 3 | SGM2014AN |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET |
|
| 4 | SGM2014M |
Sony Corporation |
GaAs N-channel Dual Gate MES FET |
|
| 5 | SGM2015 |
Shengbang Microelectronics |
Linear Regulators |
|