The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz • High gain: Ga = 18dB (typ.) at 900MHz • Low cross-modulation • High stability .
• Low voltage operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage VDSX 12
• Gate 1 to source voltage VG1S
–5
• Gate 2 to source voltage VG2S
–5
• Drain current ID 55
• Allowable power dissipation PD 150
• Channel temperature Tch 150
• Storage temperature Tstg
–55 to +150
V V V mA mW °C °C
S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGM2014AN |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
2 | SGM2014M |
Sony Corporation |
GaAs N-channel Dual Gate MES FET | |
3 | SGM2013 |
SG Micro |
Linear Regulators | |
4 | SGM2013N |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
5 | SGM2015 |
Shengbang Microelectronics |
Linear Regulators | |
6 | SGM2016AM |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
7 | SGM2016AN |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
8 | SGM2016AP |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
9 | SGM2016M |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
10 | SGM2016P |
Sony Corporation |
GaAs N-channel Dual-Gate MES FET | |
11 | SGM2019 |
Shengbang Microelectronics |
RF-Linear Regulators | |
12 | SGM20 |
Sumitiomo |
compact physical dimensions |