1200V Silicon Carbide Doubler Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C. Reverse Voltage VR 1200V DC Forward Current IF(avg) 20A TC = 65°C Repetitive Peak Forward Current IFRM 50A tp=8.3ms, Sine per leg Non-Repetative Forward Surge Current IFSM 250A tp=10µs, Pulse.
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER EFFECIENCY SMALLER HEAT SINK IDEAL FOR EXTREME ENVIRONMENT APPLICATIONS APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES D1 2 D2 1 3 ORDERING GUIDE Part Number SD11812 Description 1200V Silicon Carbide Doubler Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD11810 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
2 | SD11800 |
Solitron |
1200V Silicon Carbide Schottky Diode | |
3 | SD11801 |
Solitron Devices |
1200V Silicon Carbide Schottky Diode | |
4 | SD11803 |
Solitron Devices |
1200V 10A Silicon Carbide Schottky Diode | |
5 | SD11806 |
Solitron Devices |
Dual 1200V Silicon Carbide Schottky Diode | |
6 | SD11807 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
7 | SD11808 |
Solitron Devices |
1700V 10A Silicon Carbide Schottky Diode | |
8 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
9 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
10 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
11 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
12 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |