1200V Silicon Carbide Diode | non-isolated back side VALUE 1200V 1200V 1200V 1200V 10A 10A 44A 43A 33A 16W 19W 175°C 200°C -55°C to +175°C -55°C to +175°C 260°C TEST CONDITIONS TC = 25°C TC = 125°C TC = 125°C, tp = 10ms, Half Sine Pulse TC = 25°C, tp = 8.3ms, Half Sine Pulse TC = 150°C, tp = 8.3ms, Half Sine Pulse TC = 25°C TC = 125°C CALL: +1 561-848-431.
VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Maximum Case Temperature Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Temperature for 10 Se.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD11800 |
Solitron |
1200V Silicon Carbide Schottky Diode | |
2 | SD11803 |
Solitron Devices |
1200V 10A Silicon Carbide Schottky Diode | |
3 | SD11806 |
Solitron Devices |
Dual 1200V Silicon Carbide Schottky Diode | |
4 | SD11807 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
5 | SD11808 |
Solitron Devices |
1700V 10A Silicon Carbide Schottky Diode | |
6 | SD11810 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
7 | SD11812 |
Solitron Devices |
1200V Silicon Carbide Dual Schottky Doubler Diode | |
8 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
9 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
10 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
11 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
12 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |