1200V 10A Silicon Carbide Diode (isolated back side) ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage DC Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation, max. Maximum Case Temperature Maximum Junction Temperature Operating.
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER EFFECIENCY SMALLER HEAT SINK IDEAL FOR EXTREME ENVIRONMENT APPLICATIONS APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES 1 3 ORDERING GUIDE Part Number SD11803 Description 1200V 10A Silicon Carbide Diode (isolated back side) ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD11800 |
Solitron |
1200V Silicon Carbide Schottky Diode | |
2 | SD11801 |
Solitron Devices |
1200V Silicon Carbide Schottky Diode | |
3 | SD11806 |
Solitron Devices |
Dual 1200V Silicon Carbide Schottky Diode | |
4 | SD11807 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
5 | SD11808 |
Solitron Devices |
1700V 10A Silicon Carbide Schottky Diode | |
6 | SD11810 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
7 | SD11812 |
Solitron Devices |
1200V Silicon Carbide Dual Schottky Doubler Diode | |
8 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
9 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
10 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
11 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
12 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |