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650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER SYMBOL VALUE TEST CONDITIONS Max D.C. Reverse Voltage VR 650V Repetitive Peak Voltage VRRM 650V Surge Peak Reverse Voltage VRSM 650V DC Blocking Voltage VDC 650V DC Forward Current IF(avg) 88A TC = 25°C 39A TC = 125°C Repetitive Peak .
NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS 1 3 PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER EFFECIENCY SMALLER HEAT SINK IDEAL FOR EXTREME ENVIRONMENT APPLICATIONS APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ORDERING GUIDE Part Number SD11810 Description 650V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) PARAMETER SYMBOL VALUE TE.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SD11812 |
Solitron Devices |
1200V Silicon Carbide Dual Schottky Doubler Diode |
|
| 2 | SD11800 |
Solitron |
1200V Silicon Carbide Schottky Diode |
|
| 3 | SD11801 |
Solitron Devices |
1200V Silicon Carbide Schottky Diode |
|
| 4 | SD11803 |
Solitron Devices |
1200V 10A Silicon Carbide Schottky Diode |
|
| 5 | SD11806 |
Solitron Devices |
Dual 1200V Silicon Carbide Schottky Diode |
|
| 6 | SD11807 |
Solitron Devices |
650V Silicon Carbide Schottky Diode |
|
| 7 | SD11808 |
Solitron Devices |
1700V 10A Silicon Carbide Schottky Diode |
|
| 8 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS |
|
| 9 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version |
|
| 10 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers |
|
| 11 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors |
|
| 12 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |
|