Dual 1200V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Maximum Junction Temperature Operating Temperature Range Storage Temperature Rang.
VRRM 1200V IF @ 125°C 20A/40A ISOLATED BACKSIDE ZERO REVERSE RECOVERY TO-258 HERMETIC PACKAGE MIL-PRF-19500 SCREENING AVAILABLE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWER DENSITY APPLICATIONS AEROSPACE HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES D1 2 D2 1 3 ORDERING GUIDE Part Number SD11806 Description Dual 1200V Silicon Carbide Diode ABSOLUTE MAXIMUM RATINGS PARAMETER Max D.C. Reverse Voltage Repetitive Peak Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SD11800 |
Solitron |
1200V Silicon Carbide Schottky Diode | |
2 | SD11801 |
Solitron Devices |
1200V Silicon Carbide Schottky Diode | |
3 | SD11803 |
Solitron Devices |
1200V 10A Silicon Carbide Schottky Diode | |
4 | SD11807 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
5 | SD11808 |
Solitron Devices |
1700V 10A Silicon Carbide Schottky Diode | |
6 | SD11810 |
Solitron Devices |
650V Silicon Carbide Schottky Diode | |
7 | SD11812 |
Solitron Devices |
1200V Silicon Carbide Dual Schottky Doubler Diode | |
8 | SD1100 |
ETC |
N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS | |
9 | SD1100C |
International Rectifier |
STANDARD RECOVERY DIODES Hockey Puk Version | |
10 | SD1100P |
TSC |
(SD120P - SD1100P) Schottky Barrier Rectifiers | |
11 | SD1115 |
SGS-Thomson |
(SD1xxx) Transistors | |
12 | SD1127 |
SGS-Thomson |
(SD1xxx) Transistors |